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| DMN5L06 Lead-free Green SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features * * * * * * * * * Single N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) E G TOP VIEW S D G H K D B C A SOT-23 Dim A B C D E G M L Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish 3/4 Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Gate J H J K L M a Drain All Dimensions in mm Source Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 50 50 20 40 280 1.5 350 357 -55 to +150 Units V V V mA A mW C/W C Characteristic Drain-Gate Voltage RGS 1.0MW Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30614 Rev. 3 - 2 1 of 4 www.diodes.com DMN5L06 a Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance @ TA = 25C unless otherwise specified Symbol BVDSS @ TC = 25C @ TC = 125C IDSS IGSS VGS(th) RDS (ON) ID(ON) gFS VSD Ciss Coss Crss Min 50 3/4 3/4 0.49 3/4 3/4 0.5 200 0.5 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 1.6 2.2 1.0 3/4 3/4 3/4 3/4 3/4 Max 3/4 0.1 500 20 1.2 3 4 3/4 3/4 1.4 50 25 5.0 Unit V A nA V W A mS V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 50V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA 1.5 VGS = 10V 8V 6V 5V 4V 3V 1 8V 10V 6V VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 5V 4V 0.9 3V 0.1 TA = 150 C TA = 125 C TA = 85 C 0.6 0.01 TA = 25 C TA = 0 C TA = -25 C TA = -55 C 0.3 0 0 1 2 3 4 5 0.001 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics DS30614 Rev. 3 - 2 2 of 4 www.diodes.com DMN5L06 0.8 10 VDS = 10V ID = 1mA Pulsed NEW PRODUCT VGS(th), GATE THRESHOLD VOLTAGE (V) 0.7 0.6 VGS = 10V Pulsed TA = 125 C TA = 150 C TA = 85 C 0.5 0.4 0.3 0.2 0.1 0 -75 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 10 VGS = 5V Pulsed 1 TA = -55 C TA = 25 C TA = 0 C TA = -25 C 0.1 0.001 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current TA = 25 C Pulsed 1 8 7 TA = 125 C TA = 150 C TA = 85 C 6 5 1 TA = -55 C TA = 25 C TA = 0 C TA = -25 C 4 3 2 1 ID = 280mA ID = 140mA 0.1 0.001 0.01 0.1 1 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2.5 2.3 2.1 1.9 ID = 280mA VGS = 10V Pulsed VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 1 VGS = 0V Pulsed IDR, REVERSE DRAIN CURRENT (A) TA = 150 C 0.1 TA = 125 C 1.7 1.5 1.3 1.1 0.9 0.7 ID = 140mA TA = 85 C 0.01 TA = 25 C TA = -25 C TA = -55 C 0.5 -50 -25 0 25 50 75 100 125 150 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 1 DS30614 Rev. 3 - 2 Tch, CHANNEL TEMPERATURE ( C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature 3 of 4 www.diodes.com DMN5L06 |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 1 VDS = 10V Pulsed TA = -25 C TA = -55 C NEW PRODUCT IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 0.1 TA = 0 C 0.1 TA = 25 C VGS = 0V 0.01 TA = 85 C TA = 125 C TA = 150 C TA = 25C Pulsed 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Reverse Drain Current vs. Source-Drain Voltage 1 0.01 0.001 0.01 0.1 1 500 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Pd, POWER DISSIPATION (mW) 400 300 200 100 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE ( C) Fig. 11, Derating Curve - Total Ordering Information Device DMN5L06-7 Notes: (Note 5) Packaging SOT-23 Shipping 3000/Tape & Reel 4. Short duration test pulse used to minimize self-heating effect. 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K5L = DMN5L06 Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September K5L Date Code Key Year Code YM 2005 S 2006 T 2007 U 2008 V 2009 W Month Code Jan 1 Feb 2 March 3 Apr 4 May 5 Jun 6 Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D DS30614 Rev. 3 - 2 4 of 4 www.diodes.com DMN5L06 |
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